High-voltage high input impedance unity-gain voltage buffer

• We present a novel structure of a voltage buffer for high-voltage SoI systems.
• Source-input and gate-input buffer best features are kept by the new buffer.
• High impedance input node without any DC-path is the asset of by the new buffer.
• Voltage gain very close to unity is also obtained by the new buffer structure.
• Most of the modifications are placed in off-signal-path current-bias section.

The paper presents a novel structure of a voltage buffer intended for application in high-voltage integrated systems. The presented solution is based on both source-input and gate-input voltage buffer, so as to get the best of both structures. The resulting circuitry offers high impedance input node without any DC-path, and voltage gain close to unity. Simulation results of the proposed circuit designed in 0.8 µm HV SoI technology are presented. The buffer has been granted a patent by the Polish Patent Office.

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