Analytical optimization of high-performance and high-yield spiral inductor in integrated passive device technology

The analytical optimization of several spiral inductors with different inner diameters, line widths, coil spacing, turn numbers, ring shapes, metal thicknesses, and substrates was performed by the measurement-derived inductance and Q-factor. Through the analytical optimization, a thick electroplated Cu/Au metal process and an additional sputter-etching strategy on a 200 μm finished SI-GaAs substrate with the suitable layout parameters have been proposed in order to obtain the higher performance and yield for the spiral inductors. The proposed physical layouts and fabrication parameters are an optimal solution for manufacturing spiral inductors in the integrated passive device (IPD) process that require high performance, stringent size, and volumetric efficiency.