کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
547804 | 1450483 | 2009 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: TCAD study on gate-all-around cylindrical (GAAC) transistor for CMOS scaling to the end of the roadmap TCAD study on gate-all-around cylindrical (GAAC) transistor for CMOS scaling to the end of the roadmap](/preview/png/547804.png)
In this paper, we report TCAD study on gate-all-around cylindrical (GAAC) transistor for sub-10-nm scaling. The GAAC transistor device physics, TCAD simulation, and proposed fabrication procedure have been discussed. Among all other novel fin field effect transistor (FinFET) devices, the gate-all-around cylindrical device can be particularly used for reducing the problems of conventional multi-gate FinFET, improving device performance, and scaling-down capabilities. With gate-all-around cylindrical architecture, the transistor is controlled essentially by infinite number of gates surrounding the entire cylinder-shaped channel. Electrical integrity within the channel is improved by reducing the leakage current due to the non-symmetrical field accumulation such as the corner effect. Our proposed fabrication procedure for making devices having the gate-all-around cylindrical (GAAC) device architecture is also discussed.
Journal: Microelectronics Journal - Volume 40, Issue 12, December 2009, Pages 1766–1771