کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
547844 872063 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Novel attributes in scaling issues of carbon nanotube field-effect transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Novel attributes in scaling issues of carbon nanotube field-effect transistors
چکیده انگلیسی

For the first time, we present a scaling study of carbon nanotube field-effect transistors (CNTFETs) using a two-dimensional model. We investigate the scaling issues in device performance focusing on transconductance characteristics, output characteristics, average velocity, Ion/Ioff ratio, subthreshold swing and drain-induced barrier lowering (DIBL) with different gate oxide thicknesses and carbon nanotube (CNT) diameters. We concluded that the Ion/Ioff ratio increases with the gate oxide thickness reduction and increase in the CNT diameter and lead to a high on-state current. Furthermore, leakage current reduces with decrease in the gate oxide thickness, but it becomes higher in CNTFETs with larger CNT diameter. Also, our results show the output conductance, transconductance, voltage gain and average electron velocity at the top of the barrier improve in CNTFETs with thinner gate oxide and larger CNT diameter. In addition, the investigation of short channel effects shows that CNTFETs with thinner gate oxide offer lower DIBL and subthreshold swing, but in the CNTFETs with larger CNT diameter DIBL and subthreshold swing become worse.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 40, Issue 1, January 2009, Pages 5–9
نویسندگان
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