کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
547857 | 872063 | 2009 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Measurement of second-order nonlinear optical susceptibility of cBN crystal synthesized at high pressure and high temperature Measurement of second-order nonlinear optical susceptibility of cBN crystal synthesized at high pressure and high temperature](/preview/png/547857.png)
We demonstrate a transverse electro-optical modulator based on a tiny and irregular octahedral wafer of cubic boron nitride (cBN) crystal that is prepared by hexagonal boron nitride at high pressure and high temperature using nitride as the catalyst. A continuous wave semiconductor laser at the wavelength of 650 nm is used as a light source. A novel electrode fabrication is designed, a developed method different from the conventional transverse electro-optical modulator is introduced and the expression of the intensity of output beam is thought over. We obtain the half-wave voltage based on experiments of transverse electro-optical modulation. The second-order nonlinear optical susceptibility χijk(2)(ω,0)=1.919×10−12 m/V of cBN crystal is calculated by means of the half-wave voltage.
Journal: Microelectronics Journal - Volume 40, Issue 1, January 2009, Pages 70–73