کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
547905 872070 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method
چکیده انگلیسی
A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (n-VDGM) over a silicon pillar is revealed. This process utilizes the technique of oblique rotating ion implantation (ORI). The self-aligned region forms a sharp vertical channel profile and decreases the channel length Lg. A tremendous improvement in the drive-on current is noted. The electron concentration profile obtained demonstrates an increased number of electrons in the channel injected from the source end as the drain voltage increases. The enhanced carrier concentration results in significant reduction in the off-state leakage current and improves the drain-induced barrier-lowering (DIBL) effect. These simulated characteristics when compared to those in a fabricated device without the ORI method show the distinct advantage of the technique reported for suppression of short-channel effects (SCE) in nanoscale vertical MOSFET.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 39, Issue 12, December 2008, Pages 1538-1541
نویسندگان
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