کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
547945 872070 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of Ge profile design on the performance of an n–p–n SiGe HBT-based analog circuit
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Effect of Ge profile design on the performance of an n–p–n SiGe HBT-based analog circuit
چکیده انگلیسی

Two new germanium profiles, graded double box (GDB) and graded step box (GSB), are considered in the base region for an n–p–n silicon–germanium heterojunctions bipolar transistors (SiGe HBTs). Their effects on the performance of the HBT-based common emitter amplifier circuit are investigated so as to predict the behavior of analog circuits in the high-frequency region. An analytical model of an n–p–n SiGe HBT with uniform impurity doping in the base is described, and used to extract SPICE parameters for the devices based on GDB and GSB as well as other two accepted profiles i.e. box and triangular profiles. The frequency response, current gain roll-off and gain-bandwidth product of HBT-based common emitter amplifier circuit for all the four profiles have been compared and contrasted.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 39, Issue 12, December 2008, Pages 1770–1773
نویسندگان
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