کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
547957 872070 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A novel current reference based on subthreshold MOSFETs with high PSRR
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
A novel current reference based on subthreshold MOSFETs with high PSRR
چکیده انگلیسی

A novel current reference based on subthreshold MOSFETs with high power supply rejection ratio (PSRR) is presented. The proposed circuit takes full advantages of the I–V transconductance characteristics of MOSFET operating in the subthreshold region and the enhancement pre-regulator with the high gain negative feedback loop for the current reference core circuit. The proposed circuit, designed with the SMIC 0.18 μm standard CMOS logic process technology, exhibits a stable current of about 1.701 μA with much low temperature coefficient of 2.5×10−4 μA/°C in the temperature range of −40 to 150 °C at 1.5 V supply voltage, and also achieves a best PSRR over a broad frequency. The PSRR is about −126 dB at dc frequency and remains −92 dB at the frequency higher 1 MHz. The proposed circuit operates stably at the supply voltage higher 1.2 V and has good process compatibility.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 39, Issue 12, December 2008, Pages 1874–1879
نویسندگان
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