Capacitance–voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1)

The electronic properties of InAs quantum dots (QDs) grown on InAlAs/InP(0 0 1) were studied by using capacitance–voltage (C–V) analysis and photoluminescence (PL) measurements. The level positions of electrons and holes could be studied separately by using n- and p-type InAlAs matrices, respectively. The holes are found to be more confined than electrons in these kinds of dots.