کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
548011 872083 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs
چکیده انگلیسی

This work presents an Improved Charge Sheet compact Model (ICSM) especially valuable for distortion analysis, where precise calculation of derivatives of at least third order is required. A new expression for the charge is used in the calculation of the current. Vertical electric field, mobility and DIBL are represented using previously reported for other purposes more precise expressions. The very good agreement obtained between experimental PD SOI MOSFETs with channel lengths from 0.32 to 10 μm and modeled currents, derivatives and distortion figures is shown.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 38, Issue 3, March 2007, Pages 321–326
نویسندگان
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