کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
548061 872089 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoluminescence study of type-II GaAs quantum well wires grown on nano-faced (3 1 1)A surface: Quasi-1D exciton observation?
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Photoluminescence study of type-II GaAs quantum well wires grown on nano-faced (3 1 1)A surface: Quasi-1D exciton observation?
چکیده انگلیسی

GaAs/AlAs corrugated superlattices (CSLs) grown on nano-faceted (3 1 1)A GaAs surface were studied using Raman spectroscopy and photoluminescence (PL) techniques. Raman data (splitting of localized transversal optical phonons) have proved structural anisotropy of the CSLs. The structural anisotropy leads to optical anisotropy appeared in strong polarization dependence of PL. Temperature dependence of PL has shown that the CSLs are type-II superlattices. Additional peak in PL spectrum at low (77–100 K) temperatures can be result of quasi-1D exciton appearance in the CSLs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 37, Issue 12, December 2006, Pages 1557–1560
نویسندگان
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