Study of gate leakage mechanism in advanced charge-coupled MOSFET (CC-MOSFET) technology

In this work we present an alternative method to evaluate the ability to charge trap of the thermal silicon oxide grown on n+-polysilicon in charge-coupled MOSFET devices. By interpreting the current conduction mechanism through the polysilicon-oxide by Frenkel–Poole model, we were able to evaluate and quantify the amount of charge trapped in it. We propose this approach as a very simple methodology to recognize the properties and quality of insulation of the thermal silicon oxide grown on n+-polysilicon devices.