Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors

• We study Indium–Gallium–Zinc Oxide transistors with temperature.
• An Arrhenius-type dependence is seen in the temperature range from 300 K up to 370 K.
• The predominant transport mechanism observed is the Variable Range Hopping.
• Modeled characteristics at different temperatures matches well the experimental ones.

The temperature dependence in the typical temperature operating range from 300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200 °C is presented and modeled.It is seen that up to T = 330 K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35 eV for VGS = 10 V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction.

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