کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
548851 1450537 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High-resolution wide-band LC-VCO for reliable operation in phase-locked loops
ترجمه فارسی عنوان
LC-VCO باند پهن با وضوح بالا برای عملیات قابل اعتماد در حلقه های فاز قفل شده
کلمات کلیدی
VCO با وضوح بالا؛ VCO باند گسترده؛ LC-VCO؛ نوسانگرها
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
چکیده انگلیسی


• A novel sizing scheme for the switches in the capacitor bank of LC-VCOs is proposed.
• More capacitors can be placed in the bank than for binary-scaled implementations.
• The resulting LC-VCO presents a wider tuning range and higher frequency resolution.
• Two gigahertz LC-VCOs with 128-band coarse tuning demonstrate the proposed scheme.
• The sizing scheme is of general application and transferable to shorter technologies.

This paper presents a novel sizing scheme to implement the array of switches in the capacitor bank of LC-VCOs for oscillation frequency coarse control. The proposed scheme allows increasing the number of elements in the capacitor bank beyond the values typically achieved by binary scaling, endowing the resulting LC-VCO with a wider tuning range and high frequency resolution, which is beneficial for the implementation of reliable phase-locked loops. Two different gigahertz LC-VCOs have been designed to validate the proposed scheme. The prototypes, fabricated in a cost-effective 0.18 μm CMOS process, cover a 700 MHz frequency range from 1.35 GHz to 2.05 GHz and from 2.05 GHz to 2.75 GHz, respectively, with a phase noise figure of − 122 dBc/Hz and − 119.5 dBc/Hz at 1 MHz from the mid-range carriers, and a power consumption of 18 mW. These figures result in a respective FOMT of − 186.4 dBc/Hz and − 183.8 dBc/Hz. The performance of the fabricated LC-VCOs is achieved in each case with a dense coarse tuning range of 128 levels, which allows, respectively, a fine tuning gain smaller than 40 MHz V− 1.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 63, August 2016, Pages 251–255
نویسندگان
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