کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488855 | 1399586 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of wafer-scale MoS2 and WSe2 2D films by spectroscopic ellipsometry
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Here, we present the spectroscopic ellipsometry investigation of synthetically grown wafer-scale two-dimensional (2D) MoS2 and WSe2 films to access quality and thickness uniformity. MoS2 and WSe2 samples were grown by chemical vapor deposition and atomic layer deposition, respectively. Complex dielectric function (ε=ε1+iε2) and thickness information of these 2D films were extracted from the measured data using multilayer optical calculations. Broad spectral range (1.2-6 eV) and multiple angles of incidence were used to reduce correlations among fitting parameter. Lineshape of ε of MoS2 and WSe2 monolayer films are consistent with literature but shows higher values, suggests better quality of our samples. Eight-inch wafer size MoS2 monolayer sample shows â¼ 70% uniformity with an average thickness of 0.65 ± 0.2 nm, and three-layer WSe2 sample of 8 Ã 1 cm2 area shows â¼ 80% uniformity with an average thickness of 2.5 ± 0.4 nm. Our results will be helpful to accelerate commercialization process of 2D devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 17, Issue 10, October 2017, Pages 1329-1334
Journal: Current Applied Physics - Volume 17, Issue 10, October 2017, Pages 1329-1334
نویسندگان
Mangesh S. Diware, Kyunam Park, Jihun Mun, Han Gyeol Park, Won Chegal, Yong Jai Cho, Hyun Mo Cho, Jusang Park, Hyungjun Kim, Sang-Woo Kang, Young Dong Kim,