کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489002 | 1399593 | 2016 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microscopic aspects of potential-induced degradation phenomena and their recovery processes for p-type crystalline Si photovoltaic modules
ترجمه فارسی عنوان
جنبه های میکروسکوپی پدیده های تخریب ناشی از پتانسیل و فرایندهای بازیابی آنها برای ماژول های فتوولتائیک سی بل
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کلمات کلیدی
ماژول فتوولتائیک، سیلیکون بلورین، قابلیت اطمینان، تخریب ناشی از پتانسیل، بهبود،
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
Processes for potential-induced degradation (PID) and recovery phenomena were characterized using p-type multicrystalline Si photovoltaic modules and by PID test method using Al plate. Very severe PID phenomena accompanied with a drastic reduction in both open-circuit voltage and shunt resistance were observed within only several hours. It was found that PID phenomena are strongly accelerated at higher temperature and under higher negative-voltage application, on the other hand, PID phenomena do not necessarily require high humidity in this test method using Al plate. Na diffusion from the cover glass to the Si cell was observed after PID test. Recovery process from PID was also observed by applying positive voltage. However, complete recovery of photovoltaic performances was observed at room temperature in the dark without positive-voltage application for test modules with PID although recovery process requires a few hundred days.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 16, Issue 12, December 2016, Pages 1659-1665
Journal: Current Applied Physics - Volume 16, Issue 12, December 2016, Pages 1659-1665
نویسندگان
Atsushi Masuda, Minoru Akitomi, Masanao Inoue, Keizo Okuwaki, Atsuo Okugawa, Kiyoshi Ueno, Toshiharu Yamazaki, Kohjiro Hara,