کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5492815 | 1526281 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of the breakdown voltage of SiPMs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The breakdown behaviour of SiPMs (Silicon PhotoMultiplier) with pixel sizes of 15Ã15,25Ã25,50Ã50, and 100Ã100μm2, manufactured by KETEK, has been investigated. From the current-voltage characteristics measured with and without illumination by LED light of 470 nm wavelength, the current-breakdown voltage, VI, and from linear fits of the voltage dependence of the SiPM gain, measured by recording pulse-area spectra, the gain-breakdown voltage, VG, have been obtained. The voltage dependence of the Geiger-breakdown probability was determined from the fraction of zero photoelectron events with LED illumination. By comparing the results to a model calculation, the photodetection-breakdown voltage, VPD, has been determined. Within experimental uncertainties, VI and VPD are equal and independent of pixel size. For VG, a dependence on pixel size is observed. The difference VIâVG is about 1 V for the SiPM with 15μm pixels, decreases with pixel size and is compatible with zero for the SiPM with 100 μm pixels.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 845, 11 February 2017, Pages 56-59
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 845, 11 February 2017, Pages 56-59
نویسندگان
V. Chmill, E. Garutti, R. Klanner, M. Nitschke, J. Schwandt,