Simulation of a well-type HPGe detector for samples both in the hole and on top of the endcap

A well-type HPGe detector model with the existence of a particular dead area in the HPGe crystal was developed for use in Monte Carlo simulation codes to better model gamma-ray efficiency characteristics. Dissimilarities of counting efficiencies between simulation and calibration were successfully minimized for the case of point and volume sources. Simulations using the resulting model are applicable to the activity measurement of samples both in the hole and on top of the endcap of the well-type HPGe detector.