Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures

Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence (PL) spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E12g and A1g modes of WS2 and MoS2 vary linearly with temperature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the band-gap shrinkage of bulk semiconductor.