The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)

The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 Ω−1 cm−1 is determined experimentally for the first time. Together with 821 Ω−1 cm−1 in Fe(111) and 1100 Ω−1 cm−1 in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe.