| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 580240 | 1453150 | 2010 | 8 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Potential dissolution and photo-dissolution of ZnO thin films
												
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																																												کلمات کلیدی
												
											موضوعات مرتبط
												
													مهندسی و علوم پایه
													مهندسی شیمی
													بهداشت و امنیت شیمی
												
											پیش نمایش صفحه اول مقاله
												 
												چکیده انگلیسی
												Potential dissolution and photo-dissolution are important concerns for zinc oxide (ZnO) photocatalysts due to the possible results of catalyst inactivation and secondary pollution from free Zn2+. In this study, magnetron-sputtered ZnO thin films were prepared and exposed under a series of corrosive conditions. ZnO films suffered rapid dissolution under: (a) extreme pH levels (â¤5 or â¥11); (b) 1 mM ethylenediaminetetraacetic acid (EDTA) solution; (c) UV (λ = 254 nm). The dissolution rate of ZnO films was moderate at pH = 6 and decreased markedly as pH increased to 7. It continued to decrease as pH increased from 7 to 10, then the trend quickly reversed as pH increased further. The lowest dissolution rate was obtained at pH = 10, with only 1.2% ZnO dissolved after 24 h of exposure. Minimal dissolution was observed on ZnO films in alkalised 1 mM oxalate and acetate solutions. Pitting corrosion was observed on ZnO films after UV irradiation, which was ascribed to photo-generated holes on surface defect sites. The presence of hole scavengers (Na2SO3) caused significant suppression on ZnO photo-dissolution. This suppression effect remained in place until hole scavengers were completely consumed, from where the photo-dissolution rates accelerated.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Hazardous Materials - Volume 178, Issues 1â3, 15 June 2010, Pages 115-122
											Journal: Journal of Hazardous Materials - Volume 178, Issues 1â3, 15 June 2010, Pages 115-122
نویسندگان
												Jie Han, Wei Qiu, Wei Gao,