کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
580438 | 1453153 | 2010 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mechanism and kinetics of parathion degradation under ultrasonic irradiation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
بهداشت و امنیت شیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Mechanism and kinetics of parathion degradation under ultrasonic irradiation Mechanism and kinetics of parathion degradation under ultrasonic irradiation](/preview/png/580438.png)
چکیده انگلیسی
The parathion degradation under ultrasonic irradiation in aqueous solution was investigated. The results indicate that at the conditions in question, degradation rate of parathion decreased with increasing initial concentration and decreasing power. The optimal frequency for parathion degradation was 600Â kHz. The free radical reactions predominate in the sonochemical degradation of parathion and the reaction zones are predominately at the bubble interface and, to a much lesser extent, in bulk solution. The gas/liquid interfacial regions are the real effective reaction sites for sonochemical degradation of parathion. The reaction can be well described as a gas/liquid heterogeneous reaction which obeys a kinetic model based on Langmuir-Hinshelwood model. The main pathways of parathion degradation by ultrasonic irradiation were also proposed by qualitative and quantitative analysis of organic and inorganic byproducts. It is indicated that the N2 in air takes part in the parathion degradation through the formation of NO2 under ultrasonic irradiation. Parathion is decomposed into paraoxon and 4-nitrophenol in the first step via two different pathways, respectively, which is in agreement with the theoretical molecular orbital (MO) calculations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Hazardous Materials - Volume 175, Issues 1â3, 15 March 2010, Pages 138-145
Journal: Journal of Hazardous Materials - Volume 175, Issues 1â3, 15 March 2010, Pages 138-145
نویسندگان
Juan-Juan Yao, Nai-Yun Gao, Cong Li, Lei Li, Bin Xu,