کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
632536 | 1455999 | 2016 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A threshold flux phenomenon for colloidal fouling in reverse osmosis characterized by transmembrane pressure and electrical impedance spectroscopy
ترجمه فارسی عنوان
یک پدیده شار آستانه ای برای فساد کلوئیدی در اسمز معکوس که توسط فشار فرابنفش و طیف سنجی امپدانس الکتریکی مشخص می شود
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
تصفیه و جداسازی
چکیده انگلیسی
We show that the nature of a flowing colloidal suspension of silica on the membrane surface changes when a transition or threshold flux is reached. This transition was well-defined and was reflected in the changes of the slope of transmembrane pressure (TMP) with flux and the conductance of the diffusion polarization (DP) layer determined by EIS. The threshold flux increased with increasing crossflow velocity. The effect of a spacer in the feed channel was also investigated and the presence of spacer increased the threshold flux. The conductance of the diffusion polarization layer (GDP) derived from the low frequency region in the EIS was identified as the most important EIS parameter for signaling the onset of cake formation and the cake enhanced concentration polarization (CECP) effect. TMP measurements on their own provided limited information on these phenomena. The threshold flux was affected strongly by the crossflow velocity and this was also illustrated in the change in the minimum of the GDP with increasing flux. This study suggests that EIS could be applied “online” using a side-stream, 'canary' cell to continuously monitor a reverse osmosis system to ensure its operations remain below the threshold flux.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Membrane Science - Volume 500, 15 February 2016, Pages 55-65
Journal: Journal of Membrane Science - Volume 500, 15 February 2016, Pages 55-65
نویسندگان
Jia Shin Ho, Lee Nuang Sim, Jun Gu, Richard D. Webster, Anthony G. Fane, Hans G.L. Coster,