کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
639840 | 1456950 | 2016 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Separation of boron and phosphorus from Cu-alloyed metallurgical grade silicon by CaO-SiO2-CaCl2 slag treatment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
تصفیه و جداسازی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Separation of boron and phosphorus from Cu-alloyed metallurgical grade silicon by CaO-SiO2-CaCl2 slag treatment Separation of boron and phosphorus from Cu-alloyed metallurgical grade silicon by CaO-SiO2-CaCl2 slag treatment](/preview/png/639840.png)
چکیده انگلیسی
A purification method using copper (Cu) alloying and CaO-SiO2-CaCl2 slag treatment had been studied in connection with the purification of metallurgical grade silicon (MG-Si). The principle of this method was that low-purity MG-Si alloyed with Cu to form Si-Cu alloy phase, and then the Si-Cu alloy was treated using CaO-SiO2-CaCl2 slag to remove impurities. Finally, selective acid leaching was applied to remove the Si-Cu alloy phase, whereupon high-purity silicon could be recovered from the Si-Cu alloy. Effects of slag composition and Cu content on the removal of boron (B) and phosphorus (P) were also investigated. When the Si-50 wt% Cu alloy treated with 45 wt% CaO-45 wt% SiO2-10 wt% CaCl2 slag for 30 min at 1550 °C, the final concentrations of B and P in the purified Si decreased from 3.12 to 0.35 ppmw and 17.14 to 7.27 ppmw, respectively. Furthermore, the corresponding removal mechanism was investigated. It was found that the reaction kinetics followed a first-order rate law with respect to B and P, and were controlled by mass transfer with mass transfer coefficients of 6.25 Ã 10â4 cm sâ1 and 2.55 Ã 10â4 cm sâ1, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Separation and Purification Technology - Volume 170, 1 October 2016, Pages 408-416
Journal: Separation and Purification Technology - Volume 170, 1 October 2016, Pages 408-416
نویسندگان
Liuqing Huang, Huixian Lai, Chuanhai Gan, Huaping Xiong, Pengfei Xing, Xuetao Luo,