کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
641893 | 1457017 | 2013 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Purification of metallurgical grade silicon by a microwave-assisted plasma process Purification of metallurgical grade silicon by a microwave-assisted plasma process](/preview/png/641893.png)
A new microwave plasma process is developed to refine and purify metallurgical grade silicon (MG-Si) effectively. Inductively coupled plasma-atomic emission spectrometry analysis (ICP-AES) indicates that the concentrations of impurities in silicon decrease significantly in the process, particularly for phosphorus, whose average removal rate is close to 100% after microwave plasma treatment of only 5 min. The underlying mechanisms of the ultra-high removal rate of impurity atoms are discussed in detail in this paper. The photoresponse switching behavior of n+-Si wafers that are made of as-purified silicon provides further evidence for the unique advantage arising from the use of microwave plasma in the purification of MG-Si.
► A new microwave plasma purification technique was proposed.
► The purification effect was significant after treatment for 15 min.
► The removal rate of the element P is 100% only for 5 min treatment.
► The experimental temperature was 1000 °C, lower than other plasma techniques.
Journal: Separation and Purification Technology - Volume 102, 4 January 2013, Pages 82–85