PLD prepared bioactive BaTiO3 films on TiNb implants

- Bioactive BaTiO3 ferroelectric layers on TiNb implants by PLD
- Perovskite BaTiO3 formed via post-deposition annealing of amorphous material
- High-temperature growth of preferentially oriented BaTiO3 via Pt interlayer
- Perovskite, polar ferroelectricity by XRD, Raman s., electrical characterization

BaTiO3 (BTO) layers were deposited by pulsed laser deposition (PLD) on TiNb, Pt/TiNb, Si (100), and fused silica substrates using various deposition conditions. Polycrystalline BTO with sizes of crystallites in the range from 90 nm to 160 nm was obtained at elevated substrate temperatures of (600 °C-700 °C). With increasing deposition temperature above 700 °C the formation of unwanted rutile phase prevented the growth of perovskite ferroelectric BTO. Concurrently, with decreasing substrate temperature below 500 °C, amorphous films were formed. Post-deposition annealing of the amorphous deposits allowed obtaining perovskite BTO. Using a very thin Pt interlayer between the BTO films and TiNb substrate enabled high-temperature growth of preferentially oriented BTO. Raman spectroscopy and electrical characterization indicated polar ferroelectric behaviour of the BTO films.