کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
672807 | 1459462 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
جریان سیال و فرایندهای انتقال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Chemical vapor deposition using single-source organosilicon precursors is one of the most effective ways to produce multifunctional SiCxNy films. It is worth mentioning that the precursor molecule design affects both the composition and properties of films. Four organosilicon compounds containing a phenyl substituent (namely, trimethylphenylsilane, trimethyl(phenylamino) silane, trimethyl(benzylamino)silane and bis(trimethylsilyl)phenylamine) have been synthesized and characterized as potential CVD precursors for SiCxNy films synthesis. The compounds have been shown to be volatile and stable enough to be used in chemical vapor deposition of SiCxNy films. Thermodynamic modeling of the film deposition from the gaseous mixture of trimethylphenylsilane and ammonia in Si-C-N-H system has demonstrated that SiCxNy films can be deposited, and there is an opportunity to determine the area of appropriate deposition conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thermochimica Acta - Volume 622, 20 December 2015, Pages 2-8
Journal: Thermochimica Acta - Volume 622, 20 December 2015, Pages 2-8
نویسندگان
E.N. Ermakova, S.V. Sysoev, L.D. Nikulina, I.P. Tsyrendorzhieva, V.I. Rakhlin, M.L. Kosinova,