Influence of substrate temperature on the growth and electrical properties of thermally evaporated Be films

The Be films were prepared on the water-cooled substrates and heated substrates by thermal evaporation, respectively. The experiment of water-cooled substrate showed the grains in Be films grown on Si substrates were refined than those grown on glass substrates and the surface roughness of Be films grown on Si substrates was also improved. The electrical performance test suggested that the electrical resistivity of Be films grown on water-cooled substrates decreased with increasing the heating temperature and was bigger than that grown on non-water-cooled substrates. For the experiment of heated substrate, the Be films appeared the loose flocculent structure, and the surface roughness firstly increased from 8 nm to 45-65 nm in the range of 150-300 °C and then decreased to 10 nm at 400 °C. Meanwhile, its electrical resistivity sharply increased from 0.6 Ω/□ to 206.6 Ω/□ due to the gradual oxidization at high temperature, especially 400 °C.