کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6748222 | 1430164 | 2018 | 31 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Path-independent integrals in electrochemomechanical systems with flexoelectricity
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی عمران و سازه
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Path-independent integrals in electrochemomechanical systems with flexoelectricity Path-independent integrals in electrochemomechanical systems with flexoelectricity](/preview/png/6748222.png)
چکیده انگلیسی
Recently, a larger flexoelectric-like response in a bending semiconductor was found by Narvaez et al. This fact indicates that the electrochemical processes have a great influence on flexoelectricity. Thus, study on the coupling between the electrochemical process and the flexoelectric effect is crucial. In this paper, the classical Noether theorem is applied to the dissipative electrochemomechanical processes with consideration of the flexoelectric effect and the strain gradient. The necessary and sufficient conditions for obtaining the symmetry transformation are derived. Several conservation integrals, including J- and L-integrals, are obtained. Then, the relation of the J- and L-integrals with the energy release rate is verified. We also show that J-integral here can reduce to the result in previous work. Finally, a Mode III crack problem taking the flexoelectric effect into account is discussed to show the path-independence of the J-integral.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Solids and Structures - Volume 147, 15 August 2018, Pages 20-28
Journal: International Journal of Solids and Structures - Volume 147, 15 August 2018, Pages 20-28
نویسندگان
Yu Pengfei, Chen Jianyong, Wang Hailong, Liang Xu, Shen Shengping,