کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6879320 | 1443111 | 2018 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Robust TFET SRAM cell for ultra-low power IoT applications
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
شبکه های کامپیوتری و ارتباطات
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Robust TFET SRAM cell for ultra-low power IoT applications Robust TFET SRAM cell for ultra-low power IoT applications](/preview/png/6879320.png)
چکیده انگلیسی
Design of ultra-low power SRAM with robust operation for Internet of Thing (IoT) sensor node is a new challenge. In this work, a novel 9T TFET based SRAM bit cell is proposed. The analysis and simulation results demonstrate that the proposed cell eliminates read disturb issue and outperforms the state-of-the-art 9T TFET bit cell in terms of static and dynamic write performance. The presented circuit topology incorporates power cut-off and write '0' only technique to enhance the write performance. The proposed cell exhibits 1.15à higher write margin (WM), 25% lower write delay, consumes 73% (57%) lower write (average) energy, 7% smaller standby leakage power measured at VDDâ¯=â¯0.3â¯V. The proposed cell also shows significant improvement in the read/write performance as compared with existing 7T and 8T TFET cells. Our proposed cell also eliminates half-select disturb issue to make it suitable for bit-interleaving architecture that is a must for enhanced soft error immunity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: AEU - International Journal of Electronics and Communications - Volume 89, May 2018, Pages 70-76
Journal: AEU - International Journal of Electronics and Communications - Volume 89, May 2018, Pages 70-76
نویسندگان
Sayeed Ahmad, Naushad Alam, Mohd. Hasan,