Electrochromic properties of Al doped B-subsituted NiO films prepared by sol–gel

In this paper, Al doped B-substituted NiO films were prepared by sol–gel method. The effect of the Al content on the structure of the AlxB0.15NiO films were studied with X-ray diffraction (XRD) and transmission electron microscopy (TEM). The electrochemical and EC properties were examined by cyclic voltammetric (CV) measurements and UV–Vis spectrophotometry, respectively. Al doping could prevent the crystallization of the films, which exhibited much better electrochemical and electrochromic properties than undoped samples. The bleached state absorbance could be significantly lowered when the Al added. EC efficiencies measured at λ = 500 nm of the films with different Al doping content reach ∼30 cm2 C−1, with a change in transmittance up to 70%.