کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6942227 1450225 2018 21 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Recent advances in EM and BTI induced reliability modeling, analysis and optimization (invited)
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Recent advances in EM and BTI induced reliability modeling, analysis and optimization (invited)
چکیده انگلیسی
For BTI effects, we will briefly explain the key mechanisms behind it first. Then, we will demonstrate how to bring aging-awareness to EDA tool flows based on our so-called degradation-aware cell libraries. Afterwards, we will present the impact of BTI effects on the leakage and dynamic power showing that BTI impact not only affects circuits' delay over time (as in the traditional view), but also the overall power of circuits. Towards removing guard-bands and hence increase the efficiency, we will present how aging-induced stochastic timing errors can be translated into deterministic and controlled approximations in which aging effects are suppressed with a minimum loss in quality. Finally, we will demonstrate short-term aging effect which is a recent discovery that is hardly explored until now. In fact, short-term aging effects are a paradigm shift in BTI from sole long-term reliability degradation, which is observable in the order of months and years as in the traditional view, to an emerging reliability degradation, which is observable in a significantly smaller time domain in the order of milliseconds and even microseconds. Some of the developed EM models and assessment programs can be downloaded at https://github.com/sheldonucr/physics_based_em_assessment_analysis. The developed aging models, degradation-aware cell libraries, reliability framework, etc. are publicly available at: http://ces.itec.kit.edu/dependable-hardware.php. They are ready to be directly used with existing EDA tool flows like Synopsys without requiring any modifications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Integration, the VLSI Journal - Volume 60, January 2018, Pages 132-152
نویسندگان
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