کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6942228 | 1450225 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High bandwidth transimpedance amplifier using FGMOS for low voltage operation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper a novel CMOS design of transimpedance amplifier (TIA) suitable for low-voltage low-power application is presented. A floating gate metal oxide semiconductor (FGMOS) transistor is used here in common source configuration to provide active feedback along with a standard MOSFET which acts as input stage of the circuit. Main intend of this work is to minimize supply requirement with increased linearity. The circuit of TIA presented in this paper works only at 1Â V supply with small power consumption of 1.1Â mW. One of the popular frequency compensation techniques is shunt peaking technique. It is employed here to extend bandwidth. The transimpedance output and â 3Â dB bandwidth of proposed circuit are 37.7Â dBÂ Ohms and 13.5Â GHz, respectively. The input impedance and transfer function is evaluated using mathematical analysis and small signal model of circuit. This is observed that results are improved as compared to well known regulated common gate (RC-G) amplifier.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Integration, the VLSI Journal - Volume 60, January 2018, Pages 153-159
Journal: Integration, the VLSI Journal - Volume 60, January 2018, Pages 153-159
نویسندگان
Urvashi Bansal, Maneesha Gupta,