کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6944840 | 1450450 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High performance CMOS level up shifter with full-scale 1.2â¯V output voltage
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper introduces a very low static current CMOS level up shifter for low voltage single supply and high performance. The proposed low to high voltage level shifter is implemented using low threshold voltage transistors in 65â¯nm CMOS technology and based on differential topology. The shifter circuit was designed to be functional for an input voltage from 0.45 up to 1.2â¯V. Driving a 450â¯fF of capacitive load, the shifter's energy-delay product (EPD) is a 54% lower than a similar single supply level up shifter. Post-layout simulations, for every technological corner, temperature range from 25 up to 125â¯Â°C, operating input voltages and output capacitive loads (maximum of 740â¯fF), demonstrate the topology is fully functional without any impact on the static power consumption and the operating frequency of 500â¯MHz. Monte Carlo analysis shows the robustness of the proposed shifter within a 3Ï device mismatch.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 78, August 2018, Pages 11-15
Journal: Microelectronics Journal - Volume 78, August 2018, Pages 11-15
نویسندگان
José-Carlos GarcÃa, Juan A. Montiel-Nelson, S. Nooshabadi,