کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945292 | 1450472 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance analysis of meander-type inductor in silicon and flexible technology
ترجمه فارسی عنوان
تجزیه و تحلیل کارایی سلف مینداردر در تکنولوژی سیلیکن و انعطاف پذیر
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
چکیده انگلیسی
In this paper meander-type inductors are designed and fabricated in silicon and flexible technology in order to investigate the performance of this topology and the possibilities of its utilization in RF applications. The CMOS inductor occupies the area of 0.104Â mm2, whereas the area of the inkjet printed one on flexible substrate is 1693.44Â mm2. In the CMOS case, the inductance is 2.8Â nH up to 7Â GHz, Q-factor is 3.9 at 8.42Â GHz and the resonant frequency is at 20.04Â GHz. The measured and simulated (ADS Momentum) results differ by as low as 7%. The flexible technology inductor yields inductance of 720Â nH up to 30Â MHz, Q-factor of 2.1 at 50Â MHz, while the resonant frequency is at 92Â MHz. The design of both components is presented in detail and obtained results are thoroughly discussed in this paper, showing that the meander topology implemented in either of these cutting edge technologies enables wideband inductor operation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 56, October 2016, Pages 57-64
Journal: Microelectronics Journal - Volume 56, October 2016, Pages 57-64
نویسندگان
Aleksandar Pajkanovic, Goran M. Stojanovic, Snezana M. Djuric,