کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945424 | 1450475 | 2016 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analytical PSpice model for SiC MOSFET based high power modules
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
A simple analytical PSpice model has been developed and verified for a 4H-SiC based MOSFET power module with voltage and current ratings of 1200Â V and 120Â A. The analytical simulation model is a temperature dependent silicon carbide (SiC) MOSFET model that covers static and dynamic behavior, leakage current and breakdown voltage characteristics. The technology dependent MOSFET modeling parameters are extracted from characterization measurements, datasheets and PSpice simulations at various temperatures. The SiC MOSFET model is implemented in the PSpice circuit simulation platform using PSpice standard components and analog behavior modeling (ABM) blocks. The MOSFET switching performance is investigated under influence of different circuit elements, such as stray inductance, gate resistance and temperature, in order to study and estimate on-state and switching losses pre-requisite for design of various converter and inverter topologies. The performance of the SiC MOSFET model is fairly accurate and correlates well with the measured results over a wide temperature range.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 53, July 2016, Pages 167-176
Journal: Microelectronics Journal - Volume 53, July 2016, Pages 167-176
نویسندگان
Daniel Johannesson, Muhammad Nawaz,