Study of proton radiation effect to row hammer fault in DDR4 SDRAMs

Proton-based radiation damage tests were performed with DDR4 SDRAM components from two different technologies. Experiment results showed that after proton irradiation, the number of bit errors caused by the row hammering test increased about 41% and 66% in technologies 2x-nm and 2y-nm, respectively. With 2y-nm technology, bit errors started to appear from 5 K Number of Hammering (NHMR)-the equivalent of 500-μs retention time. For 2y-nm components, more than 90% of failed words had multiple failed cells, which could not be corrected by Single Error Correction and Double Error Detection (SEC-DED) codes.