کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6946247 1450541 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment
چکیده انگلیسی
In this work, the electrostatic discharge (ESD) protection of Schottky diode with fluorine-based plasma treatment is proven by transmission-line pulse (TLP) measurement. And the low-frequency noise (LFN) is used to determine the activation energy (Ea) of a GaN Schottky diode with plasma treatment. This experiment compares the Schottky diode with CF4 and CHF3 plasma treatment, respectively with a standard Schottky diode to determine the characteristics and to assess the low-frequency noise and the ESD protection ability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 59, April 2016, Pages 44-48
نویسندگان
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