کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946401 | 1450542 | 2016 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
SiC power MOSFETs performance, robustness and technology maturity
ترجمه فارسی عنوان
عملکرد مؤلفه های قدرت سی سی، استحکام و بلوغ تکنولوژی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
چکیده انگلیسی
Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discussed and partly demonstrated. Before their widespread use in the field, the transistors need to be thoroughly investigated and later validated for robustness and longer term stability and reliability. This paper proposes a review of commercial SiC power MOSFETs state-of-the-art characteristics and discusses trends and needs for further technology improvements, as well as device design and engineering advancements to meet the increasing demands of power electronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 58, March 2016, Pages 164-176
Journal: Microelectronics Reliability - Volume 58, March 2016, Pages 164-176
نویسندگان
A. Castellazzi, A. Fayyaz, G. Romano, L. Yang, M. Riccio, A. Irace,