کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946727 | 1450545 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ruggedness of 1200Â V SiC MPS diodes
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
SiC merged-pin-Schottky (MPS) diodes possess fast switching ability combined with low losses. Compared to conventional Schottky diodes they also provide a high surge current capability making them rugged against surge current pulses of more than seventeen times the rated current for a 10Â ms half-sine pulse. In this paper further aspects of device ruggedness are presented such as the surge current capability of two diodes in parallel and the turn-off behavior at application condition and at overcurrent. It was found that the turn-off characteristics are almost independent from the applied voltage. Further, the diode could withstand turn-off from fifteen times the rated current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issues 9â10, AugustâSeptember 2015, Pages 1677-1681
Journal: Microelectronics Reliability - Volume 55, Issues 9â10, AugustâSeptember 2015, Pages 1677-1681
نویسندگان
S. Fichtner, S. Frankeser, J. Lutz, R. Rupp, T. Basler, R. Gerlach,