کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6946727 1450545 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ruggedness of 1200 V SiC MPS diodes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Ruggedness of 1200 V SiC MPS diodes
چکیده انگلیسی
SiC merged-pin-Schottky (MPS) diodes possess fast switching ability combined with low losses. Compared to conventional Schottky diodes they also provide a high surge current capability making them rugged against surge current pulses of more than seventeen times the rated current for a 10 ms half-sine pulse. In this paper further aspects of device ruggedness are presented such as the surge current capability of two diodes in parallel and the turn-off behavior at application condition and at overcurrent. It was found that the turn-off characteristics are almost independent from the applied voltage. Further, the diode could withstand turn-off from fifteen times the rated current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issues 9–10, August–September 2015, Pages 1677-1681
نویسندگان
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