کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946796 | 1450547 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer](/preview/png/6946796.png)
چکیده انگلیسی
Using nanometer-resolution characterization techniques, we present a study of the local structural and electrical properties of grain boundaries (GBs) in polycrystalline high-κ (HK) dielectric and their role on the reliability of underlying interfacial layer (IL). A detailed understanding of this analysis requires characterization of HK/IL dielectrics with nanometer scale resolution. In this work, we present the impact of surface roughness, thickness and GBs containing high density of defects, in polycrystalline HfO2 dielectric on the performance of underlying SiOx (x ⩽ 2) IL using atomic force microscopy and simulation (device and statistical) results. Our results show SiOx IL beneath the GBs and thinner HfO2 dielectric experiences enhanced electric field and is likely to trigger the breakdown of the SiOx IL.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issues 9â10, SeptemberâOctober 2014, Pages 1712-1717
Journal: Microelectronics Reliability - Volume 54, Issues 9â10, SeptemberâOctober 2014, Pages 1712-1717
نویسندگان
K. Shubhakar, N. Raghavan, S.S. Kushvaha, M. Bosman, Z.R. Wang, S.J. O'Shea, K.L. Pey,