کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946830 | 1450545 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects](/preview/png/6946830.png)
چکیده انگلیسی
This paper describes the degradation of InGaN-based LEDs submitted to constant current stress; based on combined electroluminescence, photoluminescence and deep-level transient spectroscopy we show that: (i) when submitted to constant current stress, LEDs can show a measurable decrease in the optical power, which is more prominent in the low current regime; (ii) the decrease in optical power is strongly correlated to the increase in the Shockley-Read-Hall recombination coefficient A, as estimated by differential lifetime measurements; (iii) stress induces the increase in the concentration of a trap level, with activation energy between 0.6 and 0.7Â eV, which is supposed to be located next to/within the active region. The results suggest that the optical degradation can be ascribed to the increase in non-radiative recombination, rather than to a decrease in carrier injection efficiency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issues 9â10, AugustâSeptember 2015, Pages 1775-1778
Journal: Microelectronics Reliability - Volume 55, Issues 9â10, AugustâSeptember 2015, Pages 1775-1778
نویسندگان
M. La Grassa, M. Meneghini, C. De Santi, M. Mandurrino, M. Goano, F. Bertazzi, R. Zeisel, B. Galler, G. Meneghesso, E. Zanoni,