کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6968101 | 1453004 | 2018 | 31 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photocatalytic degradation of sulfamethoxazole by hierarchical magnetic ZnO@g-C3N4: RSM optimization, kinetic study, reaction pathway and toxicity evaluation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
بهداشت و امنیت شیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The degradation of sulfamethoxazole (SMX) by a synthesized hierarchical magnetic zinc oxide based composite ZnO@g-C3N4 (FZG) was examined. Hierarchical FZG was synthesized by using Fe3O4 nanoparticle as the magnetic core and urea as the precursor for in situ growth of g-C3N4 on the surface of petal-like ZnO. The effect of catalyst dosage (0.4-0.8âg/L), solution pH (3-11) and airflow rate (0.5-2.5âL/min) on the SMX removal efficiency and the optimization of process was studied by response surface methodology (RSM) based on central composite design (CCD). The obtained RSM model with R2â=â0.9896 showed a satisfactory correlation between the predicted values and experimental results of SMX removal. Under the optimum conditions, i.e. 0.65âg/L photocatalyst concentration, pHâ=â5.6 and airflow rateâ=â1.89âL/min, 90.4% SMX removal was achieved after 60âmin reaction. The first-order kinetic rate constant for SMX removal by using FZG was 0.0384 minâ1 while the rate constant by commercial ZnO was 0.0165âminâ1. Moreover, under the optimum conditions, about 64% COD removal and 45% TOC removal and a considerable reduction in toxicity were observed. The analysis of generated intermediates during the photocatalytic degradation of SMX was conducted by LC-HR-MS/MS method and a degradation pathway was proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Hazardous Materials - Volume 359, 5 October 2018, Pages 516-526
Journal: Journal of Hazardous Materials - Volume 359, 5 October 2018, Pages 516-526
نویسندگان
Amir Mirzaei, Laleh Yerushalmi, Zhi Chen, Fariborz Haghighat,