کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7001182 | 1454759 | 2018 | 23 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and X-ray photoelectron spectroscopy studies of ZnGa2O4 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
شیمی کلوئیدی و سطحی
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چکیده انگلیسی
ZnGa2O4 thin films coated on quartz substrate were prepared by sol-gel spinning method. The preparation condition has great effect on the film structure. When the concentration ratio of polyvinylpyrrolidone and cations in the precursor solution was small (â¼0.50), the films showed larger particle size and porous structure, and more oxygen vacancy defects. Moreover, the self stimulated luminescence of the films at 400â¯nm was weak. On the contrary, when the ratio was more than 0.83, the films with better quality were obtained and the emission at 400â¯nm was stronger. The existence of surface contamination was confirmed by depth profiling analysis of the film using X-ray photoelectron spectroscopy. The results indicated that the films contained zinc, gallium, oxygen, and a significant amount of carbon on the surface. As sputtering proceeded, the carbon content gradually decreased and the contents of composition elements increased. The O/Zn ratio is close to 4.0 and Ga/Zn ratio is close to 2.0 after the disappearance of the contamination layer, which indicates that the as-obtained ZnGa2O4 films are stoichiometric. At the film interface, a new Zn 2p XPS peak emerged, and we think that zinc interacted with the quartz substrate to form a new phase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surfaces and Interfaces - Volume 10, March 2018, Pages 129-135
Journal: Surfaces and Interfaces - Volume 10, March 2018, Pages 129-135
نویسندگان
Nanan Li, Pengfei Zhu, Yang Chen, Xiulan Duan, Fapeng Yu,