کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7002019 | 1454786 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of a novel catalyst (SoFeIII) and its catalytic performance towards the removal rate of sapphire substrate during CMP process
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
شیمی کلوئیدی و سطحی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Chemical mechanical polishing of sapphire with a novel catalyst (SoFeIII)-based colloidal silicon dioxide has been studied with high resolution transmission electron microscopy and X-ray diffraction. It has been found that a polytype of aluminun trihydroxide is formed on the polished crystal surface when SoFeIII-80 °C catalyst is used, while aluminum silicate hydrate layer is found on the polished sapphire surface when burnished with catalyst-free slurry. And the novel catalyst plays effective performance towards improving the removal rate of sapphire, and its removal rate is 7.21 μm/h, 1.66 times than the material removal rate obtained with catalyst-free slurry. Additionally, the optimum CMP removal by SoFeIII-80 °C yielded an ultra-smooth wafer surface with an average roughness of 0.0543 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Tribology International - Volume 120, April 2018, Pages 99-104
Journal: Tribology International - Volume 120, April 2018, Pages 99-104
نویسندگان
Li Xu, Xin Zhang, Chengxi Kang, Rongrong Wang, Chunli Zou, Yan Zhou, Guoshun Pan,