کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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700779 | 1460803 | 2012 | 4 صفحه PDF | دانلود رایگان |
Current amplification at room temperature has been achieved in diamond bipolar junction transistors fabricated on (111)-oriented substrate. Improved current amplification properties were achieved by utilizing optimized phosphorus-doped diamond for reducing the series resistance of the n-type base layer. Further enhancement of characteristics including operation current, blocking voltage and reproducibility is required; however, the developed diamond bipolar transistor that works at room temperature is considered to be the first step toward realizing a high-performance power device utilizing the excellent physical properties of diamond.
Current amplification at room temperature has been achieved in diamond bipolar junction transistors fabricated on (111)-oriented substrate. Improved current amplification properties were achieved by utilizing optimized phosphorus-doped diamond for reducing the series resistance of the n-type base layer.Figure optionsDownload as PowerPoint slide
Journal: Diamond and Related Materials - Volumes 27–28, July–August 2012, Pages 19–22