کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
700853 | 890944 | 2010 | 6 صفحه PDF | دانلود رایگان |
We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si–N bonds, and no evidence of the existence of Si–B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.
Research Highlights
► The Si-doped c-BN films were prepared by in-situ co-sputtering.
► Si atoms only replace B atoms and combine with N atoms in the Si-doped c-BN.
► The resistivity of the c-BN with 3.3 at.% Si is lowered by two orders of magnitude.
Journal: Diamond and Related Materials - Volume 19, Issue 11, November 2010, Pages 1371–1376