کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
700874 | 1460813 | 2010 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carbon nanotubes for interconnects in future integrated circuits: The challenge of the density
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Carbon nanotubes for interconnects in future integrated circuits: The challenge of the density Carbon nanotubes for interconnects in future integrated circuits: The challenge of the density](/preview/png/700874.png)
چکیده انگلیسی
A CVD process with a high density of CNTs has been developed on doped silicon material thanks to plasma pre-treatment of the catalyst. With this process small diameter double and triple wall CNTs with an average diameter of 3.8 nm have been grown. The density of the best materials on blanket substrate is larger than 1012 cm− 2. These materials have been successfully integrated in via holes with a diameter ranging between 1 µm and 0.3 µm with an equivalent density. In 140 nm hole diameter large 70 nm bundle formations have been observed. In these bundles a density of CNT walls close to 1013 cm− 2 has been estimated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 19, Issues 5–6, May–June 2010, Pages 382–388
Journal: Diamond and Related Materials - Volume 19, Issues 5–6, May–June 2010, Pages 382–388
نویسندگان
Jean Dijon, Adeline Fournier, Pierre David Szkutnik, Hanako Okuno, Celine Jayet, Murielle Fayolle,