کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
700928 1460813 2010 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparison of the XPS spectra from homoepitaxial {111}, {100} and polycrystalline boron-doped diamond films
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Comparison of the XPS spectra from homoepitaxial {111}, {100} and polycrystalline boron-doped diamond films
چکیده انگلیسی

In this work, we have used X-ray photoelectron spectroscopy (XPS) to investigate the nature of surface adsorbed species and their sensitivity to the boron concentration [B] in two sets of as-grown diamond films: homoepitaxial {111} and polycrystalline. These sets cover each one at least three of the four doping ranges: low doping (5 × 1016 < [B] < 1.5 × 1019 cm− 3), high doping (1.5 × 1019 < [B] < 3 × 1020 cm− 3), heavy doping (3 × 1020 < [B] < 2 × 1021 cm− 3), and phase separation ([B] > 2 × 1021 cm− 3). The results are compared to those we have previously obtained on {100} homoepitaxial films in the same doping ranges.A detailed description of both the nature and the relative concentrations of the main surface chemical species on every set of films is reported. Besides the usual CHx bonds on the diamond surface, the following oxygen-related groups: Ether (C–O–C), hydroxyl (C–OH, only on polycrystalline films), carbonyl (> C=O) and carboxyl (HO–C=O) have been found on the surface of grown diamond films, upon spontaneous oxidation under air (no oxidation treatment has been applied). The evolution of each surface chemical group according to the boron concentration in the films is.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 19, Issues 5–6, May–June 2010, Pages 630–636
نویسندگان
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