The role of inert gas in MW-enhanced plasmas for the deposition of nanocrystalline diamond thin films

Nanocrystalline diamond thin films have been deposited using microwave plasma enhanced deposition with gas mixtures of composition H2/CH4/X, where X was one of the inert gases He, Ne, Ar and Kr and typically constituted > 90% of the total gas flow. The diamond films obtained with each gas mixture deposited at approximately the same rate (0.15–0.5 µm h− 1), and all showed similar morphologies and average grain sizes, despite very obvious differences in the appearance and gas temperatures of the respective plasmas. These plasmas were probed by optical emission and cavity ring-down spectroscopy, and results from companion 2D chemical kinetic modelling of the Ar/H2/CH4 and He/H2/CH4 plasma were used to guide interpretation of the experimental observations. We conclude that the inert gas, though acting primarily as a buffer, also has significant effects on the thermal conduction of the gas mixtures, the electron temperature and electron energy distribution, and thereby changes the main channels of ionization and input power absorption. As a result, inert gas dilution elevates the electron and gas temperatures, enhances the hydrogen dissociation degree and affects the H/C mixture composition and deposition mechanisms.